In　this　paper,　according　to　the　analysis　of　insulated-gated　bipolar　transistor　(IGBT)　failure　module,　the　potential　reliability　defects　of　IGBT　module　are　evaluated　by　the　finite　element　method　(FEM).　The　simulation　model　is　based　on　a　commercial　device.　Results　show　that,　thermoelectric　stress　may　cause　the　deformation　of　IGBT　module,　and　then　form　the　solder　delamination　or　voids;　solder　defects　can　greatly　increase　the　junction　temperature,　which　makes　the　larger　deformation;　the　higher　duty　cycle　will　make　IGBT　module　deformation　increase,　which　is　easier　to　form　voids　or　cracks.　All　these　will　form　a　vicious　circle,　and　then　bring　higher　failure　risk.　©　2018　IEEE.