Single　Event　sensitivity　research　is　of　great　significance　for　optimizing　the　device　structure　and　improving　the　single　event　resistance　of　the　device.　In　this　paper,　single　event　current　responses　of　planar　gate　power　MOSFET　at　different　single　event　incident　positions　for　different　cell　distribution　and　different　width　length　ratio　under　vertical　incident　are　simulates　and　collected　charges　are　calculated.　Simulation　results　show,　for　square　cell　with　tetragonal　distribution,　the　incident　position　with　peak　collected　charge　usually　located　either　at　the　points　where　the　electric　field　is　high　symmetrical,　or　at　the　channel　midline.　But　as　the　cell　length　increases,　single　event　burnout　has　been　taken　place　when　heavy　particle　incident　at　JFET　midline.　This　shows　that　perhaps　the　strip-shaped　cells　are　indeed　benefit　to　uniform　electric　field　distribution,　but　they　are　not　necessarily　the　best　choice　for　resistance　single-event　burnout.　Finally,　Hexagon　distribution　of　square　cell　can　reduce　the　sensitivity　of　single　event　effects　near　the　corners　of　the　square　well,　but　the　single　event　effects　at　other　locations　are　not　significantly　improved　compared　with　the　tetragon　distribution.　©　2021　ACM.