In　order　to　increase　the　total　dose　resistance　of　the　CMOS　half-bridge　driving　chip,　we　redesign　the　undervoltage　Lockout　circuit　and　layout　of　high　voltage　levelshift　circuit　in　this　driving　circuit.　In　the　meantime,　we　strengthened　the　circuit　layout　against　total　dose　effect　by　using　N-ring　gate　MOSFET　and　widening　wires　in　the　layout.　Through　the　improvement　of　circuit　structure　and　layout,　a　half-bridge　driving　circuit　is　designed,　which　can　work　normally　and　reduce　the　leakage　current　of　circuit　significantly　under　total　dose　irradiation.　©　2021　ACM.