Integrating　two-dimensional　(2D)　semiconducting　materials　into　memristor　structures　has　paved　the　way　for　emerging　2D　materials　to　be　employed　in　a　vast　field　of　memory　applications.　Bismuth　oxyselenide　(Bi2O2Se),　a　2D　material　with　high　electron　mobility,　has　attracted　significant　research　interest　owing　to　its　great　potential　in　various　fields　of　advanced　applications.　Here,　we　explore　the　out-of-plane　intrinsic　switching　behavior　of　few-layered　Bi2O2Se　via　a　cross　point　device　for　application　in　conductive　bridge　random　access　memory　(CBRAM)　and　artificial　synapses　for　neuromorphic　computing.　Via　state-of-the-art　methods,　CVD-grown　Bi2O2Se　nanoplate　is　applied　as　a　switching　material　(SM)　in　an　Al/Cu/Bi2O2Se/Pd　CBRAM　structure.　The　device　exhibits　∼90　consecutive　DC　cycles　with　a　tight　distribution　of　the　SET/RESET　voltages　under　a　compliance　current　(CC)　of　1　mA,　a　retention　of　over　10　ks,　and　multilevel　switching　characteristics　showing　four　distinct　states　at　Vread　values　of　0.1,　0.2,　0.25,　and　0.3　V.　Moreover,　an　artificial　synapse　is　realized　with　potentiation　and　depression　by　modulating　the　conductance.　The　switching　mechanism　is　explained　via　Cu　migration　through　Bi2O2Se　based　on　HRTEM　analysis.　The　present　structure　shows　potential　for　future　integrated　memory　applications.　©　2023