Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT - Details

Author：

Fu, Qiang (Fu, Qiang.) | Zhang, Wanrong (Zhang, Wanrong.) | Jin, Dongyue (Jin, Dongyue.) | Zhao, Yanxiao (Zhao, Yanxiao.) | Zhang, Lianghao (Zhang, Lianghao.)

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EI Scopus CSCD

Abstract：

Compared　with　BVCEO,　BVCES　is　more　related　to　collector　optimization　and　more　practical　significance,　so　that　BVCES　×　fT　rather　than　BVCEO　×　fT　is　employed　in　representing　the　limit　of　the　product　of　the　breakdown　voltage-cutoff　frequency　in　SiGe　HBT　for　collector　engineering　design.　Instead　of　a　single　decrease　in　collector　doping　to　improve　BVCES　×　fT　and　BVCEO　×　fT,　a　novel　thin　composite　of　N-　and　P+　doping　layers　inside　the　CB　SCR　is　presented　to　improve　the　well-known　tradeoff　between　the　breakdown　voltage　and　cut-off　frequency　in　SiGe　HBT,　and　BVCES　and　BVCEO　are　improved　respectively　with　slight　degradation　in　fT.　As　a　result,　the　BVCES　×　fT　product　is　improved　from　537.57　to　556.4　GHz•V,　and　the　BVCEO　×　fT　product　is　improved　from　309.51　to　326.35　GHz•V.　©　2015　Chinese　Institute　of　Electronics.

Keyword：

Silicon alloys Heterojunction bipolar transistors Electric breakdown Cutoff frequency Product design

Author Community：

[ 1 ] [Fu, Qiang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 2 ] [Fu, Qiang]College of Physics, Liaoning University, Shenyang, China
[ 3 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 4 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 5 ] [Zhao, Yanxiao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 6 ] [Zhang, Lianghao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

Reprint Author's Address：

[fu, qiang]college of physics, liaoning university, shenyang, china;;[fu, qiang]college of electronic information and control engineering, beijing university of technology, beijing, china

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Source ：

Journal of Semiconductors

ISSN： 1674-4926

Year： 2015

Issue： 4

Volume： 36

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 4

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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