The　rapid　development　of　the　third-generation　semiconductors　has　posed　new　requirements　and　challenges　for　power　electronic　packaging.　In　recent　years,　the　utilization　of　nano-Ag　and　Cu　sintering　has　emerged　as　a　promising　solution　for　third-generation　semiconductor　packaging.　Sintered　Ag　demonstrates　remarkable　thermal　conductivity　and　exceptional　oxidation　resistance,　while　sintered　Cu　offers　economic　benefits　and　superior　electromigration　resistance　compared　to　sintered　Ag.　This　work　reviews　the　bonding　process　of　Ag　and　Cu　nanoparticles　for　power　electronics　packaging,　and　the　shear　strength　and　reliability　of　sintered　joints.　The　influence　of　material　properties,　encompassing　particle　size,　shape,　and　composition,　along　with　critical　sintering　parameters　such　as　temperature,　pressure,　and　duration　is　discussed.　Additionally,　the　pivotal　role　played　by　the　metallization　layer　for　the　sintered　bonding　process　is　evaluated.　Various　reliability　test　results　are　summarized　and　analyzed　focusing　on　their　affecting　factors.　Furthermore,　this　review　explores　the　broader　landscape　by　delving　into　the　opportunities　and　challenges　posed　by　sintered　Ag　and　Cu　in　the　realm　of　power　electronic　packaging.