With　the　rapid　development　of　the　third-generation　semiconductors　SiC　and　GaN,　traditional　packaging　materials,　such　as　Si-based　lead-free　solder,　cannot　satisfy　the　requirements　of　high-power　density　and　high-temperature　loading　in　power　electronic　devices　any　more.　Nowadays,　the　joints　packaged　by　Cu　nanoparticle　sintering　technique　can　not　only　be　bonded　at　low-temperature　and　then　serve　at　high-temperature,　but　also　exhibit　excellent　thermal　conductivity,　electrical　conductivity　and　relatively　lower　cost　comparing　with　Ag　nanoparticles.　Thus,　more　and　more　attention　has　been　attracted　in　the　field　of　Cu　nanoparticle　sintering　technique　for　power　electronic　packaging,　which　makes　Cu　nanoparticles　become　one　of　the　most　potential　high-temperature-resistant　packaging　and　interconnection　materials.　In　this　work,　the　current　research　progress　of　Cu　nanoparticle　sintering　technique　was　summarized,　including　the　fabrication　of　Cu　nanoparticle　pastes,　the　factors　affecting　the　performance　of　sintered　joints　and　the　reliability　of　joints.　Meanwhile,　the　oxidation　behavior　as　well　as　the　anti-oxidation　methods　of　Cu　nanoparticle　were　introduced.　Besides,　the　high-temperature　working　reliability　and　failure　mechanism　of　Cu　nanoparticle　sintered　joints　were　discussed.　This　review　aims　to　promote　the　application　of　low-cost　Cu　nanoparticle　sintering　technique　for　high-performance　and　high-reliability　power　electronic　packaging.