With　the　development　of　semiconductor　technology,　sintered　silver　is　considered　as　the　most　suitable　interconnect　material　due　to　its　advantages　such　as　high　melting　point.　However,　the　interface　between　sintered　silver　layer　and　substrate　is　easy　to　fail　under　harsh　service　conditions　of　SiC　power　module.　Compared　with　copper　substrates,　DBA　(Direct　Bonded　Aluminum)　substrates　have　higher　thermal　stability　are　widely　used　in　the　interconnection　of　third　generation　power　devices.　But　the　reliability　of　sintered　silver/aluminum　interface　is　still　the　bottleneck　problem　restricting　the　reliability　of　high　temperature　interconnection.　In　this　paper,　the　influence　of　different　metallized　layers　on　the　bonding　strength　between　sintered　nano　silver　and　DBA　substrate　was　studied.　And　on　the　basis　of　considering　the　influence　of　different　metallized　layers,　the　reverse　analysis　of　the　test　results　was　carried　out,　and　the　CZM　traction　separation　rule　was　proposed.　The　CZM　model　given　in　this　paper　can　be　used　to　analyze　the　shear　strength　of　sintered　silver/DBA　joints.　The　performance　of　metallized　layers　was　proposed　to　optimize　the　packaging　process　and　improve　the　thermal　mechanical　reliability　of　the　sintered　silver/　DBA　joints.