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Author:

Shang, Zixuan (Shang, Zixuan.) | Liu, Lingchen (Liu, Lingchen.) | Wang, Guangcheng (Wang, Guangcheng.) | Xu, Hao (Xu, Hao.) | Cui, Yuanyuan (Cui, Yuanyuan.) | Deng, Jianming (Deng, Jianming.) | Lou, Zheng (Lou, Zheng.) | Yan, Yinzhou (Yan, Yinzhou.) | Deng, Jinxiang (Deng, Jinxiang.) | Han, Su-Ting (Han, Su-Ting.) | Zhai, Tianrui (Zhai, Tianrui.) | Wang, Xueyun (Wang, Xueyun.) | Wang, Lili (Wang, Lili.) | Wang, Xiaolei (Wang, Xiaolei.) (Scholars:王晓蕾)

Indexed by:

EI Scopus SCIE

Abstract:

Neuromorphic computing can simulate brain function and is a pivotal element in next-generation computing, providing a potential solution to the limitations brought by the von Neumann bottleneck. Optoelectronic synaptic devices are highly promising tools for simulating biomimetic nervous systems. In this study, we developed an optoelectronic neuromorphic device with a transistor structure constructed using ferroelectric CuInP2S6. Essential synaptic behaviors in this device are observed in response to light and electrical stimuli. The optoferroelectric coupling is revealed, and the highly tunable gate modulation of the charge carrier is realized in a single device. On this basis, the light adaptation of the biological eyes and smarter Pavlovian dogs was implemented successfully and enhanced by ferroelectric polarization. The gate voltage application promotes the migration of additional Cu+ ions in the in-plane direction, thus enhancing the synaptic performance of electrical stimulation. Meanwhile, the processing ability of convolutional kernel noise images in ferroelectric devices has been achieved. Our results offer the important observation and application of ferroelectric polarization-enhanced synaptic properties of a transistor structure and have great potential in promoting the development of two-dimensional van der Waals materials and devices.

Keyword:

neuromorphic computing optoelectronicsynaptic device CuInP2S6 ferroelectric polarization synaptic plasticity gate modulation

Author Community:

  • [ 1 ] [Shang, Zixuan]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Guangcheng]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Yan, Yinzhou]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Deng, Jinxiang]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhai, Tianrui]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Xiaolei]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Liu, Lingchen]Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
  • [ 8 ] [Xu, Hao]Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
  • [ 9 ] [Lou, Zheng]Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
  • [ 10 ] [Wang, Lili]Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China
  • [ 11 ] [Cui, Yuanyuan]Beijing Inst Technol, Sch Aerosp Engn, Beijing 100081, Peoples R China
  • [ 12 ] [Deng, Jianming]Beijing Inst Technol, Sch Aerosp Engn, Beijing 100081, Peoples R China
  • [ 13 ] [Wang, Xueyun]Beijing Inst Technol, Sch Aerosp Engn, Beijing 100081, Peoples R China
  • [ 14 ] [Han, Su-Ting]Hong Kong Polytech Univ, Fac Sci, Hong Kong 999077, Peoples R China

Reprint Author's Address:

  • [Zhai, Tianrui]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China;;[Wang, Xiaolei]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China;;[Wang, Lili]Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China;;[Wang, Xueyun]Beijing Inst Technol, Sch Aerosp Engn, Beijing 100081, Peoples R China;;

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Source :

ACS NANO

ISSN: 1936-0851

Year: 2024

Issue: 44

Volume: 18

Page: 30530-30539

1 7 . 1 0 0

JCR@2022

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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