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Author:

Li, Meiling (Li, Meiling.) | Wang, Mengxi (Wang, Mengxi.) | Xu, Xiaoguang (Xu, Xiaoguang.) | Meng, Kangkang (Meng, Kangkang.) | He, Bin (He, Bin.) | Yu, Guoqiang (Yu, Guoqiang.) | Li, Ang (Li, Ang.) | Xu, Zedong (Xu, Zedong.) | Hu, Youfan (Hu, Youfan.) | Peng, Lian-Mao (Peng, Lian-Mao.) | Jiang, Yong (Jiang, Yong.)

Indexed by:

Scopus SCIE

Abstract:

Field-free magnetization switching driven by spin-orbit torque (SOT) is an up-and-coming solution for spintronic devices, which enables energy efficient reconfigurable logic-in-memory computing is well-suited for next-generation data-intensive applications. However, the use of ferromagnetic/antiferromagnetic systems in flexible spin logic devices is still in the early stages of development. Here, a polyimide/Ta/Pt/Co/IrMn/Pt-based devices are reported as a potential candidate for flexible field-free programmable spin logic applications. By controlling the exchange bias at the Co/IrMn interface, the flexible Hall bar device has successfully realized SOT-induced magnetization switching under zero field. Basing on its magnetization switching capability, the devices can realize all-electric controlled flexible programmable spin logic. Using two Hall bar devices, AND, NOT, OR, NAND, and NOR Boolean logic functions can be achieved by controlling the path of the pulse current, which provides a new solution for flexible spin-logic devices with all-electric manipulation.

Keyword:

flexible device spin-orbit torque field-free switching spintronic device

Author Community:

  • [ 1 ] [Li, Meiling]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China
  • [ 2 ] [Wang, Mengxi]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China
  • [ 3 ] [Xu, Xiaoguang]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China
  • [ 4 ] [Meng, Kangkang]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China
  • [ 5 ] [Jiang, Yong]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China
  • [ 6 ] [Li, Meiling]Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
  • [ 7 ] [Wang, Mengxi]State Key Lab Spintron Devices & Technol, Hangzhou 311300, Peoples R China
  • [ 8 ] [He, Bin]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
  • [ 9 ] [Yu, Guoqiang]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
  • [ 10 ] [Li, Ang]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 11 ] [Xu, Zedong]Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, State Key Lab Separat Membranes & Membrane Proc, Tianjin 300387, Peoples R China
  • [ 12 ] [Jiang, Yong]Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, State Key Lab Separat Membranes & Membrane Proc, Tianjin 300387, Peoples R China
  • [ 13 ] [Hu, Youfan]Peking Univ, Ctr Carbon Based Elect, Sch Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
  • [ 14 ] [Peng, Lian-Mao]Peking Univ, Ctr Carbon Based Elect, Sch Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

Reprint Author's Address:

  • [Xu, Xiaoguang]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China;;[Jiang, Yong]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Key Lab Adv Mat & Devices Postmoore Chips, Minist Educ, Beijing 100083, Peoples R China;;[Jiang, Yong]Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, State Key Lab Separat Membranes & Membrane Proc, Tianjin 300387, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2025

1 9 . 0 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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