The　photostability,　photo-bleaching　and　photo-darkening　behavior　of　twelve　film　samples　of　Ge-As-Se　thin　films　with　different　chemical　compositions　are　investigated　when　the　films　are　exposed　at　irradiation　of　656　nm　by　thermal　evaporation　deposition.　The　relationship　between　irradiation　flux　and　the　stretched　exponential　function　with　refractive　index　and　band　gap　of　the　films　are　discussed.　The　photo-bleaching　or　photo-darkening　behaviors　are　observed　observably　in　most　films,　but　some　of　the　films　with　mean　coordination　number　(MCN)　around　2.45-2.50　are　photo-stable　within　the　accuracy　of　measurements.　The　results　show　that　the　instability　of　the　infrared　chalcogenide　glasses　thin　films　have　special　applications　in　photonics　and　optical　communication.