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Abstract：
In order to study the sidewall damage of photonic crystal, photonic crystal was fabricated by different ICP etching parameters. With the increasing bias power source. The roughness of sidewall and bottom increased. When C2H4 were added, smooth and steep sidewall of photonic crystal were achieved by optimizing the parameters of ICP at last, and the EBSD analysed the etching damage preliminarily.
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Journal of Harbin Institute of Technology
ISSN： 0367-6234
Year： 2011
Issue： SUPPL. 1
Volume： 43
Page： 401-404
Cited Count：
WoS CC Cited Count： 0
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 4
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