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Author:

Xiao, Yixin (Xiao, Yixin.) | Zhang, Xin (Zhang, Xin.) | Liu, Hongliang (Liu, Hongliang.) | Zhang, Jiuxing (Zhang, Jiuxing.)

Indexed by:

EI Scopus SCIE

Abstract:

Single-crystal LaB6 field emission tips have strong anti-poisoning ability, good emission stability, high emission current density and mature applications. As such, they have attracted much attention in field emission research. In this paper, an electrochemical corrosion device is designed to enable the simple and efficient preparation of single-crystal-LaB6 tips with different radius of curvature values. Computer simulation technology is used to study the field emission behavior of the single-crystal LaB6 tip and provides the theoretical basis for the calculation of field emission current density. The results show that the preparation process is automated, more efficient and more controllable than previous methods. When the applied voltage was 2250 V, the single-crystal LaB6 tip achieved maximum emission current density of 2.05 x 10(4) A/cm(2) at a radius of curvature of 0.5 mu m.

Keyword:

field emission Single-crystal LaB6 computer simulation technology (CST) tip

Author Community:

  • [ 1 ] [Xiao, Yixin]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Hongliang]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Jiuxing]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Jiuxing]Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

Reprint Author's Address:

  • [Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2019

Issue: 11

Volume: 48

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:211

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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