A 12.42μA 0.192ppm/°C high PSRR curvature-compensated CMOS bandgap voltage reference - Details

Author：

Zhao, Jun (Zhao, Jun.) | Peng, Xiao-Hong (Peng, Xiao-Hong.) | Hou, Li-Gang (Hou, Li-Gang.) | Zhang, Yi-Nan (Zhang, Yi-Nan.) | Sun, Guo-Qing (Sun, Guo-Qing.)

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EI Scopus

Abstract：

A　high　order　curvature-compensated　CMOS　bandgap　voltage　reference(BGR)　is　presented　in　TSMC　0.35μm　CMOS　technology　with　low　power　low　temperature-coefficient(TC)　and　high　power　supply　rejection　ratio(PSRR).　The　design　is　used　in　low　dropout　regulators　which　is　applied　in　implanted　chips.　TC　is　compensated　by　adjusting　resistor　ratio　which　have　different　temperature　characteristics.　A　PSRR　enhance　circuit　is　inserted　in　this　circuit　to　maintain　a　constant　gate-source　voltage　in　the　current　mirror.　A　TC　is　0.192ppm/°C　at　3.3V　supply　and　a　line　regulation　is　4.5ppm/V　at　room　temperature.　The　circuit　has　a　constant　voltage　of　1.14　V.　The　circuit　performs　a　PSRR　property　of　106dB@1kHz　and　46dB@1MHz.　The　circuit　consumes　a　maximum　supply　current　of　12.42μA　and　start-up　time　is　2.04μs.　©　2017　IEEE.

Keyword：

Temperature Voltage measurement Voltage regulators Microsystems Energy gap Electric current regulators CMOS integrated circuits

Author Community：

[ 1 ] [Zhao, Jun]VLSI and System Lab, Beijing University of Technology, Beijing, China
[ 2 ] [Peng, Xiao-Hong]VLSI and System Lab, Beijing University of Technology, Beijing, China
[ 3 ] [Hou, Li-Gang]VLSI and System Lab, Beijing University of Technology, Beijing, China
[ 4 ] [Zhang, Yi-Nan]VLSI and System Lab, Beijing University of Technology, Beijing, China
[ 5 ] [Sun, Guo-Qing]VLSI and System Lab, Beijing University of Technology, Beijing, China

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Source ：

Year： 2017

Volume： 2017-November

Page： 191-194

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 7

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 11

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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