The　excellent　properties　of　III-V　semiconductors　make　them　intriguing　candidates　for　next-generation　electronics　and　optoelectronics.　Their　nanowire　(NW)　counterparts　further　provide　interesting　geometry　and　a　quantum　confinement　effect　which　benefits　various　applications.　Among　the　many　members　of　all　the　III-V　semiconductors,　III-antimonide　NWs　have　attracted　significant　research　interest　due　to　their　narrow,　direct　bandgap　and　high　carrier　mobility.　However,　due　to　the　difficulty　of　NW　fabrication,　the　development　of　III-antimonide　NWs　and　their　corresponding　applications　are　always　a　step　behind　the　other　III-V　semiconductors.　Until　recent　years,　because　of　advances　in　understanding　and　fabrication　techniques,　electronic　and　optoelectronic　devices　based　on　III-antimonide　NWs　with　novel　performance　have　been　fabricated.　In　this　review,　we　will　focus　on　the　development　of　the　synthesis　of　III-antimonide　NWs　using　different　techniques　and　strategies　for　fine-tuning　the　crystal　structure　and　composition　as　well　as　fabricating　their　corresponding　heterostructures.　With　such　development,　the　recent　progress　in　the　applications　of　III-antimonide　NWs　in　electronics　and　optoelectronics　is　also　surveyed.　All　these　discussions　provide　valuable　guidelines　for　the　design　of　III-antimonide　NWs　for　next-generation　device　utilization.