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Author:

Li, Shu Feng (Li, Shu Feng.) | Wang, Li (Wang, Li.) | Su, Xueqiong (Su, Xueqiong.) | Gao, Dongwen (Gao, Dongwen.) | Kong, Le (Kong, Le.)

Indexed by:

EI Scopus SCIE

Abstract:

Zn0.9Se:Co-0.1 thin films were deposited on sapphire (Al2O3) substrates in argon atmosphere at various gas pressures by pulsed laser deposition. Influence of argon pressure on the thickness, surface morphology, crystal structure and optical properties of the thin films were investigated by various diagnosis tools. It was found that these physical properties were correlated to the argon pressure and appeared like a mutation between the pressure of 2 Pa and 4 Pa. As the deposition pressure changed from 2 Pa to 4 Pa, the collision probability between ablated species and argon molecule was increased, which resulted in the transformation of the deposition type from sputter effect to adsorption effect and the mutation of film thickness and structure. These in turn influence the transmission range and band gap of the films. All of the results suggest that the ambient pressure is a very important factor to the deposition of Zn0.9Se:Co-0.1 films by PLD.

Keyword:

argon atmosphere thin film ZnSe:Co PLD

Author Community:

  • [ 1 ] [Li, Shu Feng]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Li]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Su, Xueqiong]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Gao, Dongwen]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Kong, Le]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Li, Shu Feng]Chinese Peoples Armed Police Forces Acad, Fundament Dept, Langfang 065000, Peoples R China

Reprint Author's Address:

  • [Wang, Li]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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Source :

SURFACE REVIEW AND LETTERS

ISSN: 0218-625X

Year: 2019

Issue: 4

Volume: 26

1 . 1 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:123

JCR Journal Grade:4

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 17

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