In-suit observations of mechanical stress in alinterconnect line under thermal/electrical conditions - Details

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Abstract：

In-situ　observation　of　stress　in　AI　interconnects　under　electromigration　and　thermal　effect　by　using　the　synchrotron　radiation　x-ray　diffraction.　The　test　temperature　was　controlled　by　changing　the　current　density　of　W　(self-heating　structure).　The　EM-induced　stress　was　also　investigated　with　current　densities　from　3xI05A1cm2　to　4xI06A1cm2.The　conclusion　agreed　well　with　the　simulation　results.　(Keywords:　AI　interconnect,　synchrotron　radiation,　x-ray,　thermal　stress,　electro-migration,　FEM]　©　2009　IEEE.

Keyword：

Failure analysis Synchrotrons Synchrotron radiation Integrated circuit interconnects Failure (mechanical)

Author Community：

[ 1 ] [Zhiguo, L.I.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China
[ 2 ] [Yuehua, Wu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China
[ 3 ] [Houkui, F.U.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China
[ 4 ] [Chunsheng, G.U.O.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China
[ 5 ] [Yuan, Ji]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China
[ 6 ] [Zhimin, L.I.U.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing lO0022, China

Reprint Author's Address：

Email：

lizhiguo@bjut.edu.cn

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Source ：

Year： 2009

Page： 794-797

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 10

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

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