Effect of Ge composition on the ballasting resistor of RF power SiGe HBTs - Details

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Abstract：

A　new　expression　for　the　thermal　stability　factor　S　of　power　HBTs　is　presented　in　this　paper,　considering　the　temperature　dependence　of　collector　saturation　current.　Based　on　the　expression,　the　accurate　minimum　emitter　ballasting　resistance　(REmin)　of　the　HBTs　that　is　necessary　in　the　thermal　stability　condition　is　determined.　It　is　found　that　for　SiGe　HBTs,　the　REmin　decreases　with　the　increasing　operating　temperature　in　the　high　temperature　region　due　to　the　existence　of　Ge　composition　in　SiGe　base　whereas　for　Si　BJTs,　the　REmin　increases　monotonously　with　the　operation　temperature.　Hence　for　high-temperature-operation　SiGe　HBTs,　the　additional　emitter　ballasting　resistance　can　be　decrease　so　as　to　minimize　adverse　effect　of　the　ballasting　resistance　as　possible.　These　results　provide　a　good　guide　to　design　emitter　ballasting　resistance　of　power　HBTs　and　high-temperature-　operation　HBTs.

Keyword：

Si-Ge alloys Computational electromagnetics High temperature operations Temperature distribution Thermodynamic stability Microwave devices Power bipolar transistors Germanium

Author Community：

[ 1 ] [Xiao, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Lu, Huang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Hu, Ning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Wang, Renqing]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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Year： 2009

Issue： 557 CP

Volume： 2009

Page： 242-245

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

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信息科学技术学院本学院/部未明确归属的数据

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