Improving bonding quality in MEMS using silicon/gold /glass bonding by laser - Details

Author：

Indexed by：

EI Scopus

Abstract：

Fusion　bonding　with　Nd:　YAG　laser　method　between　silicon　and　glass　at　low　temperature　has　been　successfully　demonstrated.　This　method　could　overcome　the　movable　mechanical　parts　damages　brought　by　the　electrostatics　force　in　MEMS　(Micro-electronic-machine-system-MEMS)　device　during　the　anodic　bonding.　What＇s　more,　it　could　make　silicon　wafer　and　glass　bonded　successfully　at　low　temperature　for　the　Au/Si　alloy　fusion　temperature　is　365°C.　©　2004　IEEE.

Keyword：

Silicon wafers Low temperature effects Bonding Laser beam effects Scanning electron microscopy Microelectromechanical devices Composition Neodymium lasers

Author Community：

[ 1 ] [Yang, Daohong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China
[ 2 ] [Xu, Chen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China
[ 3 ] [Zhao, Linlin]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China
[ 4 ] [Zhao, Hui]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China
[ 5 ] [Huo, Wenxiao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China
[ 6 ] [Shen, Guangdi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing Optoelectronic Technology Laboratory, Beijing 100022, China

Reprint Author's Address：

Email：

daohongyang@emails.bjut.edu.cn

Show more details

Related Keywords：

The experimental study on lapping and polishing of metal micro-coil based on silicon wafer
2006，
Study on material damage process of Si under rotating disk test
2007，Tribology
Enhancing luminescent properties of GaN-based LED and improving optical and electrical properties of gan epitaxial wafers with excimer laser irradiation
2015，Chinese Journal of Lasers
Process development of 3D WLCSP for ultra-thin CMOS image sensor
2020，21st International Conference on Electronic Packaging Technology, ICEPT 2020

Source ：

Year： 2004

Volume： 3

Page： 1860-1862

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 7

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to