Here　we　report　a　N-ion-implanted　ZnO　microtube　fabricated　by　optical　vapor　supersaturated　precipitation　(OVSP)　and　ion　implantation　techniques.　The　N　ions　with　concentration　of　-2.4　x　1023　cm-3　were　mainly　located　below　100　nm　of　the　surface　in　the　acceptor-rich　ZnO　(A-ZnO)　microtubes.　Due　to　the　presence　of　N　in　ZnO　lattice　as　NO　defects,　an　-15-fold　enhancement　of　near-band　edge　(NBE)/deep-level　emission　(DLE)　intensity　ratio　was　achieved.　The　yellow　luminescence　and　the　anomalous　negative　thermal　quenching　(NTQ)　effect　further　confirmed　the　NO　defect　level　of　1.3　eV　above　the　valence　band　maximum　in　A-ZnO:N　microtubes.　The　implantation　of　N　ions　can　expand　the　depletion　layer　between　A-ZnO:N　detector　and　atmospheric　species,　by　which　fast　photoresponse　down　to　0.1　s　was　realized　by　a　metal-semiconductor-metal　(MSM)　UV　detector.　Compared　with　the　A-ZnO　UV　detector,　the　photoresponsivity　of　the　MSM　UV　detector　was　enhanced　by　-10　folds.　This　work　opens　up　new　opportunities　to　design　effective　UV　detectors　for　a　variety　of　practical　applications.