This　paper　investigates　the　strain　distribution　of　flexible　p-channel　low　temperature　polycrystalline　silicon　thin　film　transistors　under　biaxial　bending.　The　strain　distribution　of　LTPS　TFTs　under　different　bending　conditions　is　analysed　by　finite　element　analysis.　o　r　and　o　θ　are　essentially　equal　and　constant　within　the　load　ring.　The　finite　element　analysis　shows　that　when　the　biaxial　bending　strain　condition　is　2.5%,　the　strain　distribution　is　mainly　concentrated　at　the　contact　angle　between　the　electrode　and　the　oxide　layer.　This　strain　is　significantly　greater　than　the　overall　strain　of　the　device,　which　is　the　main　reason　for　the　bending　performance　of　the　device.　We　found　that　under　biaxial　bending,　the　threshold　voltage　shifts　towards　the　negative　axis　as　the　biaxial　strain　increases.　Within　this　strain　range,　these　electrical　properties　are　evident　under　biaxial　strain　conditions.　Comparing　theoretical　threshold　voltage　shifts　based　on　energy　band　changes　with　experimental　results　under　biaxial　strain,　it　was　found　that　changes　in　trap　density　should　also　contribute　to　the　threshold　voltage　shift.　©　Published　under　licence　by　IOP　Publishing　Ltd.