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Author:

Ma, Limin (Ma, Limin.) | Wang, Yuchen (Wang, Yuchen.) | Jia, Qiang (Jia, Qiang.) | Zhang, Hongqiang (Zhang, Hongqiang.) | Wang, Yishu (Wang, Yishu.) | Li, Dan (Li, Dan.) | Zou, Guisheng (Zou, Guisheng.) | Guo, Fu (Guo, Fu.) (Scholars:郭福)

Indexed by:

EI Scopus SCIE

Abstract:

Nano-Ag paste sintering has attracted much attention for high-power electronics packaging owing to its excellent electrical conductivity, thermal conductivity, and oxidation resistance. However, it requires printing and pre-heating before the die attach process, and the organics in the paste do not evaporate easily for large-area die attachment. In this work, a nano-Ag film (similar to 100 mu m thickness) with only 2.1% organics is developed to realize low-temperature bonding, which is compatible with the current sintering bonding process. The optimized preparation parameters of the nano-Ag films was optimized as 180 degrees C-5 min. The characteristics and sintering mechanism of nano-Ag film are discussed. The results showed that the micro/nanostructure on the surface of nano-Ag film with a small amount of organic material is responsible for the low-temperature sintering ability, which realized 24.01 MPa shear strength at 200 degrees C. The fracture was analyzed and failure modes are discussed. The easy-to-use features and low-temperature sintering ability make the nano-Ag film a promising die-attach material with high reliability. [GRAPHICS] .

Keyword:

low-temperature bonding sintering mechanism mechanical properties Nano-Ag films

Author Community:

  • [ 1 ] [Ma, Limin]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Yuchen]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 3 ] [Jia, Qiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Yishu]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Dan]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, Fu]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Hongqiang]Beihang Univ, Sch Mech Engn & Automation, Beijing 100191, Peoples R China
  • [ 8 ] [Zou, Guisheng]Tsinghua Univ, Dept Mech Engn, State Key Lab Tribol, Beijing 100084, Peoples R China
  • [ 9 ] [Guo, Fu]Beijing Union Univ, Coll Robot, Beijing 100101, Peoples R China

Reprint Author's Address:

  • [Jia, Qiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Guo, Fu]Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China;;[Guo, Fu]Beijing Union Univ, Coll Robot, Beijing 100101, Peoples R China;;

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2023

Issue: 1

Volume: 53

Page: 228-237

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:26

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

Affiliated Colleges:

Online/Total:443/10602022
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