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Author:

Ma, He (Ma, He.) | Li, Yuan (Li, Yuan.) | Hao, Jianhua (Hao, Jianhua.) | Wu, Yonghuang (Wu, Yonghuang.) | Shi, Run (Shi, Run.) | Peng, Ruixuan (Peng, Ruixuan.) | Shan, Linbo (Shan, Linbo.) | Cai, Yimao (Cai, Yimao.) | Tang, Kechao (Tang, Kechao.) | Liu, Kai (Liu, Kai.) | Zhang, Xinping (Zhang, Xinping.) (Scholars:张新平)

Indexed by:

EI Scopus SCIE

Abstract:

Vanadium dioxide (VO2), renowned for its reversible metal-to-insulator transition (MIT), has been widely used in configurable photonic and electronic devices. Precisely tailoring the MIT of VO2 on micro-/nano-scale is crucial for miniaturized and integrated devices. However, existing tailoring techniques like scanning probe microscopy, despite their precision, fall short in efficiency and adaptability, particularly on complex or curved surfaces. Herein, this work achieves the local engineering of the phase of VO2 films in high efficiency by employing laser writing to assist in the hydrogen doping or dedoping process. The laser doping and laser dedoping technique is also highly flexible, enabling the fabrication of reconfigurable, non-volatile, and multifunctional VO2 devices. This approach establishes a new paradigm for creating reconfigurable micro/nanophotonic and micro/nanoelectronic devices.

Keyword:

phase transition laser doping and dedoping vanadium dioxide infrared camouflage memristor

Author Community:

  • [ 1 ] [Ma, He]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Yuan]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Hao, Jianhua]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, He]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Li, Yuan]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Hao, Jianhua]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Xinping]Beijing Univ Technol, Sch Phys & Optoelect Engn, Beijing 100124, Peoples R China
  • [ 9 ] [Wu, Yonghuang]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 10 ] [Shi, Run]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 11 ] [Peng, Ruixuan]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 12 ] [Liu, Kai]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
  • [ 13 ] [Shan, Linbo]Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
  • [ 14 ] [Cai, Yimao]Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
  • [ 15 ] [Tang, Kechao]Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
  • [ 16 ] [Shan, Linbo]Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
  • [ 17 ] [Cai, Yimao]Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China
  • [ 18 ] [Tang, Kechao]Beijing Adv Innovat Ctr Integrated Circuits, Beijing 100871, Peoples R China

Reprint Author's Address:

  • 张新平

    [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China;;[Liu, Kai]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

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Source :

SMALL METHODS

ISSN: 2366-9608

Year: 2024

Issue: 1

Volume: 9

1 2 . 4 0 0

JCR@2022

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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