The　sulfur　doping　of　boron　nitride　films　usually　adopts　an　in-situ　doping　control　technique　during　their　deposition　processes.　In　this　paper　the　sulfur　doping　of　boron　nitride　films　is　realized　through　ion　implantation.　Experiment　results　show　that　the　boron　nitride　films　of　sulfur　ion　implantation　are　n-type.　The　resistivity　of　the　boron　nitride　films　decrease　with　increasing　sulfur　ion　implantation　dose.　Annealing　of　the　implanted　boron　nitride　films　results　in　increasing　their　doping　effect.　The　resistivity　of　the　film　implanted　at　the　dose　of　1016cm-2　and　annealed　at　600°C　for　60min　is　2.20　×　105Ω·cm,　which　is　6　orders　lower　than　that　of　the　un-implanted　film.