A　novel　AlGaInP　light　emitting　diode　(LED)　with　omni-directional　reflector　which　can　increase　the　external　quantum　efficiency　was　introduced.　This　reflector　that　was　realized　by　the　combination　of　a　dielectric　SiO2　layer　and　Au　layer　was　first　fabricated　to　the　p-type　contact　of　the　LED.　The　LED　p-type　contact　layers　were　then　bonded　to　the　solder　coated　GaAs　submount,　and　the　GaAs　substrate　was　renewed　by　wet　chemical　etching　and　mechanical　polish.　The　light　is　emitted　from　n-type　contact　layers　into　tre　medium　surrounding　the　chip.　The　characteristics　of　the　novel　AlGaInP　LED　are　presented　and　compared　with　the　conventional　AlGaInP　LED.　It　is　shown　that　the　luminous　intensity　of　the　novel　AlGaInP　LED　at　forward　current　of　20　mA　is　3　times　higher　than　that　of　the　conventional　AlGaInP　LED.