A　new　lifetime　control　technique-localized　platinum　lifetime　control　(LPLC)　is　introduced.　Silicon　samples　are　implanted　with　550　keV　protons　at　dosages　from　1　×　1013　to　5　×　1014　cm-2.　Subsequently,　platinum　diffusion　in　silicon　is　performed　at　700　or　750°C　for　15　or　30　min,　respectively.　Then　the　in-diffused　platinum　into　damaged　regions　of　the　proton-implanted　silicon　is　investigated　by　use　of　deep-level　transient　spectroscopy　(DLTS).　Finally,　for　all　of　the　LPLC　samples,　the　distribution　of　the　in-diffused　substitutional　platinum　agrees　well　with　the　damage　distribution　resulting　from　the　low-dosage　proton　implantation.　Also,　the　diodes　show　a　very　low　leakage　current　even　at　elevated　temperatures　while　keeping　the　major　advantages　of　ion　irradiation　devices,　including　low　turn-off　loss　and　soft　recovery.