Micro-light-emitting　diodes　(micro-LEDs)　are　the　key　to　next-generation　display　technology.　However,　since　the　driving　circuits　are　typically　composed　of　Si　devices,　numerous　micro-LED　pixels　must　be　transferred　from　their　GaN　substrate　to　bond　with　the　Si　field-effect　transistors　(FETs).　This　process　is　called　massive　transfer,　which　is　arguably　the　largest　obstacle　preventing　the　commercialization　of　micro-LEDs.　We　combined　GaN　devices　with　emerging　graphene　transistors　and　for　the　first-time　designed,　fabricated,　and　measured　a　monolithic　integrated　device　composed　of　a　GaN　micro-LED　and　a　graphene　FET　connected　in　series.　The　p-electrode　of　the　micro-LED　was　connected　to　the　source　of　the　driving　transistor.　The　FET　was　used　to　tune　the　work　current　in　the　micro-LED.　Meanwhile,　the　transparent　electrode　of　the　micro-LED　was　also　made　of　graphene.　The　operation　of　the　device　was　demonstrated　in　room　temperature　conditions.　This　research　opens　the　gateway　to　a　new　field　where　other　two-dimensional　(2D)　materials　can　be　used　as　FET　channel　materials　to　further　improve　transfer　properties.　The　2D　materials　can　in　principle　be　grown　directly　onto　GaN,　which　is　reproducible　and　scalable.　Also,　considering　the　outstanding　properties　and　versatility　of　2D　materials,　it　is　possible　to　envision　fully　transparent　micro-LED　displays　with　transfer-free　active　matrices　(AM),　alongside　an　efficient　thermal　management　solution.