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Author:

Yang, Wei-Ming (Yang, Wei-Ming.) | Yang, Wu-Tao (Yang, Wu-Tao.) | Xu, Cherr (Xu, Cherr.) | Chen, Jian-Xirr (Chen, Jian-Xirr.)

Indexed by:

EI Scopus

Abstract:

The temperature characteristics of SiGe HBT and its reliability under thermal stress are studied. The experiment results indicate that the current gain at 77K is much larger than the one at 290K. And there is a critical value of Ic, which is 2xl0-4A. Over this value, the gain increases with the decrease of the temperature. But below the value, the gain drops with the decrease of the temperature. The current ideal factor is smaller than 2 when the temperature is over 193K, but larger than 2 at 193K or below. Besides this, the thermal stress experiments for the base-emitter junction were taken under 100C and 150C, and the stress time was 90 hours and 30 hours, respectively. The experiment results indicate that the device characteristic parameters fluctuate under the different thermal stress conditions. The annealing and degeneration play the collective role in the characteristics fluctuating under the thermal stresscondition. ©2009 IEEE.

Keyword:

Failure analysis Integrated circuits Si-Ge alloys Thermal stress Failure (mechanical)

Author Community:

  • [ 1 ] [Yang, Wei-Ming]School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
  • [ 2 ] [Yang, Wu-Tao]School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
  • [ 3 ] [Xu, Cherr]Beijing Optoelectronics Technology Lab, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Chen, Jian-Xirr]Beijing Optoelectronics Technology Lab, Beijing University of Technology, Beijing 100022, China

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Source :

Year: 2009

Page: 319-322

Language: English

Cited Count:

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 9

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