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Author:

Pan, Guanzhong (Pan, Guanzhong.) | Xie, Yiyang (Xie, Yiyang.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Xun, Meng (Xun, Meng.) | Dong, Yibo (Dong, Yibo.) | Deng, Jun (Deng, Jun.) | Chen, Hongda (Chen, Hongda.) | Sun, Jie (Sun, Jie.)

Indexed by:

EI Scopus SCIE

Abstract:

Dependence of beam quality on optical intensity asymmetry among elements in in-phase coherently coupled vertical cavity surface emitting lasers array is analyzed using the finite-difference time domain solutions software. The analysis results reveal that the coupling efficiency of in-phased array decreases and the divergence increases as the level of optical intensity asymmetry increases. Furthermore, an addressable separated-contact three-element triangular in-phased array is fabricated and measured to verify the analysis. The array exhibits a relatively high of coupling efficiency of 24% and a neardiffraction- limit divergence of 3.2 degrees (1.12 times of the diffraction limit, D.L.) when the optical intensity of each element is adjusted to be uniform. By degrading the optical intensity symmetry, the coupling efficiency decreases to 17.07% and the divergence increases to 4.03 degrees (1.37 x D.L.). After that, a much larger 10 x 10 array exhibiting in-phase characteristics is produced and its beam quality and optical uniformity are measured and discussed. Analysis and experiment results demonstrate that symmetric optical intensity among elements is essential for in-phased array to achieve high beam quality. Employing separate contacts in the array is proved an effective way to obtain uniform optical intensity and achieve high beam quality.

Keyword:

VCSEL array beam divergence optical intensity asymmetry coupling efficiency in-phase

Author Community:

  • [ 1 ] [Pan, Guanzhong]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xun, Meng]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Dong, Yibo]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Sun, Jie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Chen, Hongda]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 9 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

Reprint Author's Address:

  • 徐晨

    [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

IEEE JOURNAL OF QUANTUM ELECTRONICS

ISSN: 0018-9197

Year: 2018

Issue: 3

Volume: 54

2 . 5 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:145

Cited Count:

WoS CC Cited Count: 9

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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