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Author:

Pan, Guanzhong (Pan, Guanzhong.) | Xie, Yiyang (Xie, Yiyang.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Xun, Meng (Xun, Meng.) | Dong, Yibo (Dong, Yibo.) | Deng, Jun (Deng, Jun.) | Sun, Jie (Sun, Jie.)

Indexed by:

EI Scopus SCIE

Abstract:

In-phase coherently coupled proton-implantdefined vertical cavity surfaceemitting laser (VCSEL) arrays face difficulties in current spreading, resulting in small array scale, low output power, and broad beamwidth. Although patterned metal grids can improve the current spreading, the undesirable out-of-phasemode tends to be dominant in the array. In this letter, by means of engineering the implantation and array parameters, in-phase mode is obtained in large-scale proton-implant-defined arrays with metal grids. Experimental results showthat these arrays are operating in in-phasemode with a nominal interelement spacing of 8 mu m and an implantation depth of 2.22 mu m. By using these parameters, a 5x5 in-phase array with a narrow beamwidth (far-field full width at half maximum) of 1.61 degrees is realized. Besides, a 10x10 in-phase array with a beamwidth of 1.89 degrees and an output power of 10.25 mW for the in-phase mode is achieved. The calculation of far fields is performed to confirm the in-phase operation measured results. Such a simple and low-cost technology provides a promising method for preparing large-scale in-phase coherently coupled VCSEL arrays.

Keyword:

proton implantation VCSEL array in-phase narrow beamwidth

Author Community:

  • [ 1 ] [Pan, Guanzhong]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xun, Meng]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Dong, Yibo]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Sun, Jie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

Reprint Author's Address:

  • 徐晨 孙捷

    [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Sun, Jie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2018

Issue: 3

Volume: 39

Page: 390-393

4 . 9 0 0

JCR@2022

ESI Discipline: ENGINEERING;

ESI HC Threshold:156

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 13

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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